Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Y. | - |
| dc.contributor.author | Kong, K.-J. | - |
| dc.contributor.author | Chang, H. | - |
| dc.contributor.author | Shin, Mincheol | - |
| dc.date.accessioned | 2013-03-28T09:04:04Z | - |
| dc.date.available | 2013-03-28T09:04:04Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-08-17 | - |
| dc.identifier.citation | 2010 10th IEEE Conference on Nanotechnology, NANO 2010, v., no., pp.1109 - 1112 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/164354 | - |
| dc.language | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-79951830431 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1109 | - |
| dc.citation.endingpage | 1112 | - |
| dc.citation.publicationname | 2010 10th IEEE Conference on Nanotechnology, NANO 2010 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Park, Y. | - |
| dc.contributor.nonIdAuthor | Kong, K.-J. | - |
| dc.contributor.nonIdAuthor | Chang, H. | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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