Device characteristics of nanoscale metal/insulator tunnel transistors in the ballistic quantum transport regime
- Issue Date
- 2005-06-09
- Language
- ENG
- Citation
China International Conference on Nanoscience and Technology, ChinaNANO 2005, no.PART 1, pp.525 - 528
- ISSN
- 1012-0394
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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