Browse "School of Electrical Engineering(전기및전자공학부)" by Author Yun, Dae-Hwan
Showing results 1 to 8 of 8
| A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET Kim, Myung-Su; Yun, Gyeong-Jun; Kim, Wu-Kang; Seo, Myungsoo; Kim, Da-Jin; Yu, Ji-Man; Han, Joon-Kyu; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.4, pp.521 - 524, 2022-04 |
| Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs Park, Jun-Young; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.12, pp.1909 - 1912, 2019-12 |
| Demonstration of Thermally-Assisted Programming with High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory Yu, Ji-Man; Park, Jun-Young; Lee, Geon-Beom; Han, Joon-Kyu; Kim, Myung-Su; Hur, Jae; Yun, Dae-Hwan; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp.1110 - 1113, 2019-10 |
| Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory Kim, Myung-Su; Ahn, Dae-Chul; Park, Jun-Young; Seo, Myungsoo; Kim, Seong-Yeon; Kim, Wu-Kang; Yun, Dae-Hwan; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199, 2019-02 |
| Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory Yun, Gyeong-Jun; Yun, Dae-Hwan; Park, Jun-Young; Kim, Seong-Yoen; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.12, pp.5505 - 5510, 2020-12 |
| Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink Park, Jun-Young; Yun, Dae-Hwan; Kim, Seong-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.212 - 215, 2019-02 |
| Synaptic Segmented Transistor with Improved Linearity by Schottky Junctions and Accelerated Speed by Double-Layered Nitride Kim, Seong-Yeon; Yu, Ji-Man; Lee, Gi Sung; Yun, Dae-Hwan; Kim, Moon-Seok; Kim, Jin-Ki; Kim, Da-Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.28, pp.32261 - 32269, 2022-07 |
| (The) improvement of cell properties and the channel potential through applying the low-k macaroni oxide in V-NAND Flash memory = 수직 적층형 낸드 플래시 메모리에 낮은 유전율의 마카로니 산화물 적용을 통한 셀 특성 및 채널 전위 개선link Yun, Dae-Hwan; Choi, Yang-Kyu; et al, 한국과학기술원, 2020 |
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