Self-Heating Effects in 3-D Vertical-NAND (V-NAND) Flash Memory

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Self-heating effects (SHEs) were investigated through simulations for 3-D V- NAND flash memory. The SHEs are varied by adjusting the thickness of the poly-crystalline channel, the number of stacked cells along with a bitline, and the configuration of the multilevel cell. The simulation data show that the temperature change was smaller than 3 K under read operation; therefore, SHEs are no longer a concern for advances in 3-D V- NAND flash memory technology. In addition, we investigated whether SHEs are influenced by a thermally isolated channel, as in a novel architecture named peripheral-under-cell (PUC), which is a peripheral circuit under cell for 3-D V- NAND flash memory.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-12
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.12, pp.5505 - 5510

ISSN
0018-9383
DOI
10.1109/TED.2020.3033503
URI
http://hdl.handle.net/10203/278903
Appears in Collection
EE-Journal Papers(저널논문)
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