Showing results 1 to 4 of 4
Electron mobility enhancement using ultrathin pure Ge on Si substrate Yeo, CC; Cho, Byung Jin; Gao, E; Lee, SJ; Lee, AH; Yu, CY; Liu, CW; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763, 2005-10 |
Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate Cho, Byung Jin; Yeo, CC; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp.107 - 110, 2005-12-08 |
Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability Cho, Byung Jin; Yeo, CC; Yeo, H; Gao, F; Lee, SJ; Yu, CY; Liu, CW, International Conference on Materials for Advanced Technologies, pp.13 - 13, 2005-07-03 |
Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric Yeo, CC; Cho, Byung Jin; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05 |
Discover