Browse "School of Electrical Engineering(전기및전자공학부)" by Author Yang, Kyounghoon
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| 14 GHz InP-RTD based MMIC VCOs with Low DC power consumption Choi, S.; Jeong, Y; Yang, Kyounghoon, IEEE 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.439 - 441, IEEE, 2006 |
| 16 GHz bandwidth InAlAs/InGaAs monolithically integrated PIN-HBT photoreceiver A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., Europ. Conf. on Optical Comm, pp.661 - 664, 1995 |
| 16-channel monolithically integrated InP-based p-i-n/HBT photoreceiver array with 11-GHz channel bandwidth and low crosstalk Syao, K. C.; Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Haddad, G. I.; Bhattacharya, P., 1997 Optical Fiber Comm. Conf. (OFC'97), pp.15 - 16, 1997-02-16 |
| 16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER GUTIERREZAITKEN, AL; Yang, Kyounghoon; ZHANG, X; HADDAD, GI; BHATTACHARYA, P; LUNARDI, LM, IEEE PHOTONICS TECHNOLOGY LETTERS, v.7, no.11, pp.1339 - 1341, 1995-11 |
| 2-38 GHz broadband compact InGaAs PIN switches using a 3-D MMIC technology Yang, J.G.; Eom, H.; Choi, S.; Yang, Kyounghoon, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, pp.542 - 545, IEEE, 2007-05-14 |
| 20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES, v.184, pp.209 - 212, 2005 |
| 200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration Park, Minsik; Song, Jonghyun; Jeong, Jaeyong; Lim, Jeong-Taek; Song, Jae-Hyeok; Lee, Won-Chul; Sim, Gapseop; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.10, pp.5257 - 5264, 2023-10 |
| 5-Gb/s On-Off Keying Low Power K-Band MMIC Oscillator Based on an RTD/HBT Technology Lee, Ki Won; Lee, Jooseok; Park, Jaehong; Lee, Jong Won; Kim, Maengkyu; Yang, Kyounghoon, 7th Global Symposium on Millimeter-Waves 2014, KIEES, 2014-05-21 |
| 5-GHz VCO with a wide tuning range using an InP-based RTD/HBT MMIC technology Choi, SK; Kim, T; Lee, B; Yang, Kyounghoon, IEEE, European Gallium Arsenide and other Compound Semiconductors Application Symposium 2004, pp.207 - 210, IEE, 2004-10-11 |
| 9 GHz Bandwidth InP-Based Integrated PIN-HBT Photoreceiver Gutierrez-Aitken, A. L.; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Conf. on InP and Related materials, pp.357 - 360, IEEE, 1995-05 |
| A 1.3 pJ/bit Energy-Efficient Ultra-Low Power On-off mode Oscillator Using an InP-based Quantum-effect Tunneling Device Lee, Jooseok; Lee, Jongwon; Park, Jaehong; Kim, Maengkyu; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, IEEE, 2012-08 |
| A 24-GHz Low-Power RTD-Based ON-OFF Keying Oscillator With an RTD Pair Configuration Park, Jaehong; Lee, Joo-Seok; Yang, Kyounghoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.6, pp.521 - 523, 2018-06 |
| A 45 mW RTD/HBT mobile D-flip flop IC operating up to 32 Gb/s Kim, T.; Jeong, Y.; Yang, Kyounghoon, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.348 - 351, IEEE, 2006-05-07 |
| A 6-20 GHz compact multi-bit digital attenuator using InP/InGaAs PIN diodes Eom, H.; Yang, Kyounghoon, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, 123, 2008-05-25 |
| A 6-30 GHz compact 3-bit digital attenuator MMIC using InP/InGaAs PEN diodes Eom, H.; Han, S.; Yang, Kyounghoon, 2008 Global Symposium on Millimeter Waves, GSMM 2008, pp.101 - 103, 2008-04-21 |
| A Broadband Multi-layer SPDT Switch using Low-loss High-isolation InP/InGaAs PIN Diodes Eom, H; Yang, JG; Choi,S; Jeong, Y; Yang, Kyounghoon, MINT-MIS, pp.183 - 186, 2007 |
| A Compact High-Speed RTD-based Reconfigurable Logic Gate Lee, J; Lee, J; Yang, Kyounghoon, IEEE International Conference On InP and Related Materials, IEEE, 2011-05 |
| A Ku-band High Isolation InP-based SPST PIN Switch using a 3-D MMIC technology Yang, J; Eom, H; Jeong, Y; Choi, S; Yang, Kyounghoon, Korean Conference on Semiconductors, pp.89 - 90, 2007 |
| A Ku-band InP-based RTD MMIC VCO with very low DC power consumption Choi, S.; Jeong, Y.; Yang, Kyounghoon, 2005 International Conference on Indium Phosphide and Related Materials, pp.263 - 266, IEEE, 2005-05-08 |
| A low DC-power multiplexer IC using an InP-based CML-mOBILE RTD/HBT technology Choi, S.; Lee, J.; Jeong, Y.; Yang, Kyounghoon, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, 123, 2008-05-25 |
| A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation Lee, Kiwon; Lee, Byoungwook; Yoon, Sunwoong; Hong, Jung-ho; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7, 2013-07 |
| A monolithic ultrahigh-speed InAlAs/InGaAs PIN-HBT photoreceiver with a bandwidth of 18.6 GHz Yang, Kyounghoon; A. L. Gutierrez-Aitken; Zhang, X.; Bhattacharya, P.; Haddad, G. I., International Symposium on Compound Semiconductors, pp.1097 - 1102, 1995 |
| A new CML-type RTD/HBT Non-inverted/Inverted Monostable-Bistable transition Logic Element (MOBILE) IC Kim, T; Choi, S; Lee, B; Yang, Kyounghoon, 2004 Int. Conf. On Solid State Devices and Materials, pp.660 - 661, 2004 |
| A New Compact 3-D Hybrid Coupler Using Multi-Layer Microstrip Lines at 15 GHz Jung, G.Y.; Jeong, Y; Choi, S; Yang, Kyounghoon, 36th European Microwave Conference, EuMC 2006, pp.25 - 28, 123, 2006-09-10 |
| A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects Kim, T.; Yang, Kyounghoon, IEEE MTT-S International Microwave Symposium Digest, pp.2141 - 2144, IEEE, 2002-06-02 |
| A new low-power RTD-based 4:1 multiplexer IC using an InP RTD/HBT MMIC technoligy Lee J.; Choi S.; Yang, Kyounghoon, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, pp.352 - 354, IPRM 2010, 2010-05-31 |
| A New Submicron Gate Patterning Technique for InP MESFETs Using Crystallographical Etching Characteristics Yoon, M; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.25 - 28, 2003 |
| A Novel Low DC Power Multiplexer based on the monolithic RTD HBT Technology Choi, S; Jeong, Y; Lee, J; Yang, Kyounghoon, Korean Conference on Semiconductors, pp.331 - 332, 2008 |
| A Novel Self-Adaptive Photosensing Pixel Structure With Tunable Sensitivity For High Performance CMOS Image Sensors Lee, S; Yang, Kyounghoon, 2006 5th IEEE Conference on Sensors, pp.299 - 302, 2006-10-22 |
| A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays Syao, K. C.; A. L. Gutierrez-Aitken; Yang, Kyounghoon; Zhang, X.; Haddad, G. I.; Bhattacharya, P., IEEE Int. Electron Devices Meeting (IEDM'96), pp.649 - 652, IEEE, 1996-12-08 |
| A Ring oscillator using an RTD-HBT heterostructure Lin, C. H.; Yang, Kyounghoon; East, J. R.; Haddad, G. I.; Chow, D.H.; Warren, L. D.; Dunlap, H. L.; et al, Int. Conf. On Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), pp.120 - 121, 2000 |
| A SELF-CONSISTENT MODEL OF GAMMA-X MIXING IN GAAS/ALAS/GAAS QUANTUM-WELL STRUCTURES USING THE QUANTUM TRANSMITTING BOUNDARY METHOD SUN, JP; MAINS, RK; Yang, Kyounghoon; HADDAD, GI, JOURNAL OF APPLIED PHYSICS, v.74, no.8, pp.5053 - 5060, 1993-10 |
| A Sub-mW D-band 2nd Harmonic Oscillator Using InP-based Quantum-effect Tunneling Devices Lee, Jooseok; Kim, Maengkyu; Lee, Jong Won; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, IEEE, 2014-05-12 |
| A varactor-tuned MMIC VCO using InP-based RTD/HBT technology Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.45, no.5, pp.408 - 411, 2005-06 |
| A W-Band InGaAs PIN-MMIC Digital Phase-Shifter Using the Switched Transmission-Line Structure Yang, Jungil; Lee, Jooseok; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, IEEE, 2012-08 |
| An HSPICE HBT model for InP-based single HBTs Yang, Kyounghoon; GutierrezAitken, AL; Zhang, X; Batthacharya, P; Haddad, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.43, no.9, pp.1470 - 1472, 1996-09 |
| An InGaAs PIN-diode based broadband traveling-wave switch with high- Isolation characteristics Yang J.G.; Kim M.; Yang, Kyounghoon, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, pp.207 - 209, IEEE, 2009-05-10 |
| An InGaAs PIN-diode based with H-I characteristics broadband traveling-wave switch Yang, JG; Kim, M; Yang, Kyounghoon, IEEE International Conference on InP and Related Materials, pp.207 - 209, IEEE, 2009 |
| Analysis of InGaAs/InP Single-Photon Avalanche Diodes With the Multiplication Width Variation Lee, Ki Won; Yang, Kyounghoon, IEEE PHOTONICS TECHNOLOGY LETTERS, v.26, no.10, pp.999 - 1002, 2014-05 |
| Area-Efficient Series-Connected Resonant Tunneling Diode Pair as Binary Neuron in Cellular Neural Network Lee, Jongwon; Choi, Sunkyu; Kim, Seong-Yeon; Lee, Jooseok; Yang, Kyounghoon, IEEE ELECTRON DEVICE LETTERS, v.41, no.9, pp.1308 - 1311, 2020-09 |
| Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications Yang, Kyounghoon; East, J. R.; Haddad, G. I., Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.113 - 118, 1998-09 |
| Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications Yang, Kyounghoon; Jack R. East; George I. Haddad, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.0, no.0, pp.113 - 118, 1999-07 |
| BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS/INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06) Yang, Kyounghoon; EAST, JR; HADDAD, GI; DRUMMOND, TJ; BRENNAN, TM; HAMMONS, BE, JOURNAL OF APPLIED PHYSICS, v.76, no.12, pp.7907 - 7914, 1994-12 |
| Class A dc bias controlled amplifiers for OFDM systems Jong, J. H.; Yang, Kyounghoon; Stark, W. E.; Haddad, G. I., 1999 IEEE Topical Workshop on Power Amps. for Wireless Comm, IEEE, 1999-09-13 |
| CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, ELECTRONICS LETTERS, v.40, no.13, pp.792 - 793, 2004-06 |
| Design and Fabrication of a Novel Inner Field-plate AlGaN/GaN-HEMT Structure for High Power Applications Lee,; Lee, S; Yang, Kyounghoon, MINT-MIS, pp.205 - 208, 2007 |
| Design and fabrication of THz frequency-range RTD oscillators with enhanced output power and frequency tunability = 향상된 발진 출력 및 주파수 변조 특성을 가지는 테라헤르츠 대역 RTD 발진기 회로의 설계 및 제작link Kim, Maeng-Kyu; Yang, Kyounghoon; et al, 한국과학기술원, 2018 |
| Design of multi-valued QMOS pre-decoder Zhang, H; Uemura, T.; Mazumder, P.; Yang, Kyounghoon, IEEE Conference on Nanotechnology, pp.614 - 617, IEEE, 2004 |
| Design optimization of high-frequency InP-HBT power cells based on thermal simulation Song, Y; Kim, T; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.75 - 81, 2001-02-15 |
| Design, modeling, and characterization of monolithically integrated InP-based (1.55 mu m) high-speed (24Gb/s) p-i-nMBT front-end photoreceivers Yang, Kyounghoon; GutierrezAitken, AL; Zhang, XK; Haddad, GI; Bhattacharya, P, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.14, no.8, pp.1831 - 1839, 1996-08 |
| Development of RTD-based oscillators with improved RF power performances by using RTD pair topology = RTD pair topology 를 이용한 개선된 출력 성능의 RTD 발진기 집적회로 개발에 관한 연구link Park, Jae-Hong; Yang, Kyounghoon; et al, 한국과학기술원, 2018 |
| Development of sub-100 μW microwave RTD VCOs Jeong, Y; Choi, S; Yang, Kyounghoon, IEEE International Conference On Nanotechnology, pp.1 - 3, IEEE, 2010-08 |
| Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE Yang, Kyounghoon; Muuns, G. O.; Wang, X.; Haddad, G. I., IEEE Int. Conf. on InP and Related Materials, pp.645 - 648, IEEE, 1997-05-11 |
| Effects of thermal stress on the performance of benzocyclobutene-passivated In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, pp.1910 - 1913, 2004-04 |
| Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure Kim, S; Yang, Kyounghoon, International Conference on Solid State Devices and Materials, pp.208 - 209, 2005 |
| Experimental investigation on temperature dependence of InP RTD-based Digital/Analog MMICs Lee, J; Choi, S; Yang, Kyounghoon, 2009 International Nanotech Symposiym & Exhibition in Korea, 2009 |
| Experimental study on temperature dependence of RTD-based low-power MMIC VCO Choi S.; Jeong Y.; Yang, Kyounghoon, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, pp.302 - 304, IEEE, 2009-05-10 |
| Fabrication and characterization of RTD-HBT inverter Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I.; Chow, D.H.; et al, 17th IEEE Cornell Conference, pp.42 - 43, IEEE, 2000-08-07 |
| Fabrication of InP-based optoelectronic integrated circuit (OEIC) photoreceivers using shared layer integration of heterojunction bipolar transistors and refracting-facet photodiodes Lee, B; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.4B, pp.1956 - 1959, 2004-04 |
| Fabrication of novel self-aligned InP/InGaAs HBT''s using dummy emitter Kim, M; Jeon, S; Yoon, M; Yang, Kyounghoon; Kwon, Young Se, Conference on Optoelectronic and Microelectronic Materials and Devices, pp.123, Conference on Optoelectronic and Microelectronic Materials and Devices, 2000-12-06 |
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