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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS/INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06)

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Yang, Kyounghoon researcher / EAST, JR / HADDAD, GI / DRUMMOND, TJ / BRENNAN, TM / HAMMONS, BE

Publisher: AMER INST PHYSICS

Issue Date: 1994-12

Language: English

Article Type: Article

Keywords: CONDUCTION-BAND DISCONTINUITY; MOLECULAR-BEAM EPITAXY; PERPENDICULAR TRANSPORT; TUNNEL STRUCTURES; GAAS; ALXGA1-XAS; ALAS; HETEROSTRUCTURES; MODEL; TRANSITION

Citation: JOURNAL OF APPLIED PHYSICS, v.76, no.12, pp.7907 - 7914

ISSN: 0021-8979

DOI: 10.1063/1.357901

URI: http://hdl.handle.net/10203/1086

Appears in Collection: EE-Journal Papers(저널논문)

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BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS/INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06)

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