A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects
- Publisher
- IEEE
- Issue Date
- 2002-06-02
- Language
- English
- Citation
IEEE MTT-S International Microwave Symposium Digest, pp.2141 - 2144
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
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