학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ iii, 44 p. ]
Dopant-segregated Schottky barrier (DSSB) FET; 저주파 노이즈 분석; 황 이온 주입; 실리사이드; 금속-반도체 접합; Dopant-segregated Schottky barrier (DSSB) FET; metal-semiconductor (M-S) junction; silicidation; sulfur implantation; low-frequency noise analysis
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