Sulfur effects in dopant-segregated schottky barrier (DSSB) junction

Abstract

In order to reduce the Schottky barrier height (SBH) in metal-semiconductor junction, sulfur (S) seg-regation technique that is advanced technique of dopant-segregation has been researched. However, there is no clear mechanism of the S segregation effects even though several theories have been proposed during the past 10 years. In this paper, arsenic (As) and S co-implanted dopant-segregated Schottky barrier (DSSB) de-vices were fabricated to verify the S effects experimentally. And the low-frequency (LF) noise analysis as well as the I-V characterization was employed. As a result, the doping effect and the S segregation effect were superposed in I-V characteristics, whereas the trapping effect by deep states, rather than doping effect, was verified as the mechanism of S effect by using LF noise analysis.