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Showing results 1 to 6 of 6

1
A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films

Kwon, Jung-Dae; Park, Jin-Seong; Lee, Han-Choon; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G282 - G284, 2006-06

2
(A) study on the characteristics on TiN films deposited by PEALD using $TiCl_4$ = PEALD법으로 증착된 TiN 박막 특성에 관한 연구link

Kwon, Jung-Dae; 권정대; et al, 한국과학기술원, 2002

3
(A) study on the two-step atomic layer deposition for TaN thin films = Two-step ALD 법을 이용한 TaN 박막 형성에 관한 연구link

Kwon, Jung-Dae; 권정대; et al, 한국과학기술원, 2007

4
Comparison of Tantalum Nitride Films for Different NH3/H-2/Ar Reactant States in Two-Step Atomic Layer Deposition

Kwon, Jung-Dae; Yun, Jungheum; Kang, Sang-Won, JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.2, 2009

5
Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Jeong, Seong-Jun; Kim, Doo-In; Kim, Sang Ouk; Han, Tae Hee; Kwon, Jung-Dae; Park, Jin-Seong; Kwon, Se-Hun, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.1, pp.671 - 674, 2011-01

6
Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma

Chung, Hoi-Sung; Kwon, Jung-Dae; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754, 2006

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