| 1 | DEFECT FORMATION IN THE SOLID-PHASE EPITAXIAL-GROWTH OF GAAS FILMS ON SI (001) SUBSTRATE CHO, KI; Choo, Woong Kil; Lee, JeongYong; Park, Sin Chong; NISHINAGA, T, JOURNAL OF APPLIED PHYSICS, v.69, no.1, pp.237 - 242, 1991-01 |
| 2 | Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots Yoon, S; Moon, Y; Lee, TW; Hwang, H; Yoon, E; Kim, YD; Lee, UH; et al, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.5, pp.535 - 541, 2000-05 |
| 3 | Epitaxial growth of ZnO layers using nanorods with high crystalline quality Park, Dong Jun; Kim, Dong Chan; Lee, JeongYong; Cho, Hyung Koun, NANOTECHNOLOGY, v.18, no.39, 2007-10 |
| 4 | Formation and microstructural characterization of In2O3 sheath layer on InN nanostructures Ahn, Hung Bae; Kim, Young Heon; Kim, Moon Deock; Kim, Chang Soo; Lee, JeongYong, CHEMICAL PHYSICS LETTERS, v.499, no.1-3, pp.131 - 135, 2010-10 |
| 5 | Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy Cagin, E.; Yang, J; Wang, W.; Phillips, J. D.; Hong, S. K.; Lee, Jae Wook; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.92, no.23, 2008-06 |
| 6 | MBE 방법으로 증착된 $Si_{1-x}Ge_x$ 박막의 응력완화에 관한 연구 = A study on the strain relaxation of $Si_{1-x}Ge_x$ thin deposited using molecular beam epitaxylink 임정욱; Lim, Jung-Wook; et al, 한국과학기술원, 1996 |
| 7 | Mn-doped Ge self-assembled quantum dots via dewetting of thin films Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong, APPLIED SURFACE SCIENCE, v.397, pp.40 - 43, 2017 |
| 8 | PA-MBE 로 성장된 indium 함량이 높은 InGaN 박막의 성장 및 구조적 특성 분석 = Growth and structural characterization of highly indium incorporated InGaN films grown by PA-MBElink 정명호; Jeong, Myoung-Ho; et al, 한국과학기술원, 2011 |
| 9 | PA-MBE 로 성장된 indium 함량이 높은 InGaN 박막의 성장 및 구조적 특성 분석 = Growth and structural characterization of highly indium incorporated InGaN films grown by PA-MBElink 정명호; Jeong, Myoung-Ho; et al, 한국과학기술원, 2011 |
| 10 | Plasma-assisted molecular-beam epitaxy of ZnO films on (0001) Al2O3: Effects of the MgO buffer layer thickness Kim, Jae Goo; Han, Seok Kyu; Kang, Dong-Suk; Yang, Sang Mo; Hong, Soon-Ku; Lee, Jae Wook; Lee, Jeong Yong; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.271 - 275, 2008-07 |
| 11 | R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가 한석규; 홍순구; 이정용; 이재욱, 전기전자재료학회논문지, v.19, no.10, pp.923 - 929, 2006-10 |
| 12 | The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy Jung, Yeon Sik; No, YS; Kim, JS; Choi, WK, JOURNAL OF CRYSTAL GROWTH, v.267, pp.85 - 91, 2004-06 |
| 13 | Two-dimensional growth of ZnO epitaxial films on c-Al2O3(0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy Jung, Yeon Sik; Kononenko, O; Kim, JS; Choi, WK, JOURNAL OF CRYSTAL GROWTH, v.274, pp.418 - 424, 2005-02 |
| 14 | 분자선 에피탁시로 InP기판위에 성장된 InGaAs와 InAlAs에피층들에서의 상분리현상 및 결정학적 품위에 관한 연구 = Phase separation and crystalline quality in InGaAs and InAlAs layers grown on InP substrate by MBElink 최정식; Choi, Jung-Sik; et al, 한국과학기술원, 1997 |
| 15 | 얇은AlSb 완충층을 사용한 GaSb/ Si(001) 박막평가 노영균; 김문덕; 권영진; 김송강; 김영헌; 박세린; 오재응; et al, 새물리, v.53, no.1, pp.34 - 38, 2006-07 |
