R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가Growth and Characterization of ZnO Thin Films on R-plane SapphireSubstrates by Plasma Assisted Molecular Beam Epitaxy

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Publisher
한국전기전자재료학회
Issue Date
2006-10
Language
Korean
Citation

전기전자재료학회논문지, v.19, no.10, pp.923 - 929

ISSN
1226-7945
URI
http://hdl.handle.net/10203/87489
Appears in Collection
MS-Journal Papers(저널논문)
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