Browse "College of Natural Sciences(자연과학대학)" by Author Cho, Yong-Hoon

Showing results 20 to 79 of 482

20
Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis

Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06

21
Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate

Cho, Yong-Hoon; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12

22
Band-edge exciton transitions in (Ga1-xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

Jeon, H. C.; Kang, T. W.; Kim, T. W.; Cho, Yong-Hoon, SOLID STATE COMMUNICATIONS, v.138, no.9, pp.444 - 447, 2006

23
Bio-information scanning technology using an optical pick-up head

Park, KH; Lee, SQ; Kim, EK; Moon, SE; Cho, Yong-Hoon; Gokarna, A; Jin, LH; et al, ULTRAMICROSCOPY, v.108, pp.1319 - 1324, 2008-09

24
Broad Ultraviolet Light Emitter using GaN Quantum Dots Grown on Multi-facet Three-dimensional Structures

Cho, Jong-Hoi; Cho, Yong-Hoon; Lee, Chulwon; YEO, HWANSEOP; Sim, Young Chul, The 19th International Symposium on the Physics of Semiconductors and Applications, The Korean Physical Society, 2018-07-02

25
Broad-band light emitting In-rich InGaN/GaN multi-quantum well formed on GaN nano- and micro-scale pyramid Structures

Ko, Young-Ho; Kim, Taek; Kwon, Bong-Joon; Ko, Suk-Min; Hwang, Jun Seok; Dang, Le Si; Cho, Yong-Hoon, International Workshop on Nitride Semiconductors (IWN2010), International Workshop on Nitride Semiconductors (IWN2010), 2010-09-19

26
Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1-xN/GaN heterostructures

Kim, TW; Choo, DC; Yoo, KH; Jung, MH; Cho, Yong-Hoon; Lee, JH, JOURNAL OF APPLIED PHYSICS, v.97, pp.1052 - 1057, 2005-05

27
Carrier dynamics analysis for efficiency droop in GaN-based light-emitting diodes with different defect densities using time-resolved electroluminescence

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.9, pp.095101, 2016-03

28
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998

29
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999

30
Carrier dynamics of anti-Stokes photoluminescence in staggered-band lineup AlxGa1-xAs-GaInP2 heterostructures

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, SPIE, pp.134 -, 1998

31
Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

Sun, YP; Cho, Yong-Hoon; Suh, EK; Lee, HJ; Choi, RJ; Hahn, YB, APPLIED PHYSICS LETTERS, v.84, no.1, pp.49 - 51, 2004-01

32
Carrier dynamics study on efficiency droop in light emitting devices by means of time-resolved electroluminescence

Cho, Yong-Hoon; Kwon, Bong-Joon; Lee, Song-Mei; Yoo, Yang-Seok, 16th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE, 2012-05-23

33
Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

Cho, Yong-Hoon; Lee, SK; Kwack, HS; Kim, JY; Lim, KS; Kim, HM; Kang, TW; et al, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2578 - 2580, 2003-09

34
Carrier recombination dynamics of AlxGa1-xN epilayers grown by MOCVD

Cho, Yong-Hoon; Gainer, GH; Lam, J; Song, JJ; Yang, W; McPherson, SA, Mat. Res. Soc. Symp. Proc, pp.457 -, 1999

35
Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots

Kim, Je-Hyung; Kwon, Bong-Joon; Cho, Yong-Hoon; Huault, Thomas; Leroux, Mathieu; Brault, Julien, APPLIED PHYSICS LETTERS, v.97, no.6, pp.061905 - 061905-3, 2010-08

36
Carrier transfer and redistribution dynamics in vertically aligned stacked In0.5Ga0.5As quantum dots with different GaAs spacer thicknesses

Kwack, Ho-Sang; Cho, Yong-Hoon; Song, Jin-Dong; Choi, Won-Jun; Lee, Jung-Il, JOURNAL OF APPLIED PHYSICS, v.106, no.12, 2009-12

37
Characteristics of two-dimensional MoS2 grown on GaN substrates by metal-organic chemical vapor deposition

Ahn, Seonghun; Cho, Yong-Hoon; Song, Yongho, The 20th International Symposium on the Physics of Semiconductors and Applications, ISPSA 2022, The Korean Physical Society, 2022-07-19

38
Characterization of InGaN/GaN lasing structures for high temperature device applications

Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Proceedings of Conference on Laser and Electro-Optics (CLEO)/IQEC’98, OSA Technical Digest Series, pp.223 -, 1998

39
Classical and Quantum Light Generation Using Nano- and Micro-Structured Nitride Semiconductors

Cho, Yong-Hoon, OPTICS and PHOTONICS International Exhibition 2017, OPTICS and PHOTONICS International Exhibition 2017, 2017-04-21

40
Classical and Quantum Light Generation using Nitride-based Semiconductor micro- and nanostructures

Cho, Yong-Hoon, SPIE Photonics West 2017, SPIE Photonics West 2017, 2017-01-31

41
Classical and Quantum Light Generation with Semiconductor Quantum Nanostructures

Cho, Yong-Hoon, The 27th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS), The 27th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS), 2017-08-25

42
Coherent single photon emission with small inhomogeneous broadening from an InGaN single quantum-dot in a nano-pyramid

Cho, Jong-Hoi; Cho, Yong-Hoon; YEO, HWANSEOP; Song, Hyun Gyu, The 19th International Symposium on the Physics of Semiconductors and Applications, The Korean Physical Society, 2018-07-05

43
Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Hwang, JS; Gokarna, A; Cho, Yong-Hoon; Son, JK; Lee, SN; Sakong, T; Paek, HS; et al, JOURNAL OF APPLIED PHYSICS, v.102, pp.1637 - 1639, 2007-07

44
Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides

Cho, Yong-Hoon; Kwack, HS; Kwon, BJ; Barjon, J; Brault, J; Daudin, B; Dang, LS, APPLIED PHYSICS LETTERS, v.89, pp.1051 - 1053, 2006-12

45
Comparison of spontaneous and stimulated emission from UV-blue photonic materials

Little, BD; Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Lam, JB; Song, JJ; Yang, W; et al, pp.290 -, 1999

46
Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different In compositions

Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; Denbaars, SP, Mat. Res. Soc. Symp. Proc, 2000

47
Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions

Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.12 - 7, 2000

48
Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect

Son, J. K.; Sakong, T.; Lee, S. N.; Paek, H. S.; Ryu, H.; Ha, K. H.; Nam, O.; et al, APPLIED PHYSICS LETTERS, v.90, no.5, 2007-01

49
Control of the 3-Fold Symmetric Shape of Group III-Nitride Quantum Dots: Suppression of Fine-Structure Splitting

Yeo, Hwan-Seop; Lee, Kwanjae; Cho, Jong-Hoi; Park, Seoung-Hwan; Cho, Yong-Hoon, NANO LETTERS, v.20, no.12, pp.8461 - 8468, 2020-12

50
Controlling optical properties of Ge-on-Si by thermal annealing and etching process

Lee, Chulwon; Ki, Bugeun; Yoo, Yang-Seok; Jang, Minho; Oh, Jungwoo; Cho, Yong-Hoon, 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Institute of Electrical and Electronics Engineers Inc., 2015-08

51
Controlling the spectral properties of light through turbid media

Park, Jung-Hoon; Park, Chunghyun; Yu, Hyunseung; Cho, Yong-Hoon; Park, YongKeun, 2013 SPIE Photonics West, SPIE, 2013-02-02

52
Critical issues of localization in the development of InGaN/GaN laser diodes

Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, pp.286 -, 1999

53
Deep-learning-based gas identification by time-variant illumination of a single micro-LED-embedded gas sensor

Cho, Incheol; Lee, Kichul; Sim, Young Chul; Jeong, Jaeseok; Cho, Minkyu; Jung, Heechan; Kang, Mingu; et al, LIGHT-SCIENCE & APPLICATIONS, v.12, no.1, 2023-04

54
Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging

Jung, Jung Hwan; Kotal, Moumita; 장민호; Lee, Junseok; Cho, Yong-Hoon; Kim, Won-Jong; Oh, Il-Kwon, RSC ADVANCES, v.6, no.77, pp.73939 - 73946, 2016-07

55
Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers

Cho, Yong-Hoon; Kim, JY; Kwack, HS; Kwon, BJ; Dang, LS; Ko, HJ; Yao, T, APPLIED PHYSICS LETTERS, v.89, pp.1681 - 1688, 2006-11

56
DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT

Kim, Kwan‐Shik; Cho, Yong-Hoon; Choe, Byung‐Doo; Jeong, Weon Guk; H. Lim, APPLIED PHYSICS LETTERS, v.67, no.12, pp.1718 - 1720, 1995-09

57
DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS

Cho, Yong-Hoon; KIM, KS; RYU, SW; KIM, SK; CHOE, BD; LIM, H, APPLIED PHYSICS LETTERS, v.66, no.14, pp.1785 - 1787, 1995-04

58
Determining the Chemical Origin of the Photoluminescence of Cesium-Bismuth-Bromide Perovskite Nanocrystals and Improving the Luminescence via Metal Chloride Additives

Kim, Joonyun; Park, Jinu; Nam, Sung-Wook; Shin, Mingue; Jun, Seongmoon; Cho, Yong-Hoon; Shin, Byungha, ACS APPLIED ENERGY MATERIALS, v.3, no.5, pp.4650 - 4657, 2020-05

59
Deterministic quantum emitter operating at room temperature in optical communication wavelength using intersubband transition of nitride-based semiconductor quantum dot, method of fabricating same, and operating method thereof

Cho, Yong-Hoon; Yeo, Hwanseop; Cho, JongHoi

60
Development and applications of super-resolution optical imaging method using near field with correlation analysis = 근접장과 상관관계 분석을 활용한 초고해상도 광학 이미징 기법 개발 및 응용link

Kim, MinKwan; 김민관; Kim, Pilhan; 김필한; et al, 한국과학기술원, 2017

61
Development of a novel ozone gas sensor based on sol-gel fabricated photonic crystal

Rahmat, M.; Maulina, W.; Isnaeni; Miftah, D. Y. N.; Sukmawati, N.; Rustami, E.; Azis, M.; et al, SENSORS AND ACTUATORS A-PHYSICAL, v.220, pp.53 - 61, 2014-12

62
Device applications of graphene and graphene quantum dots

Cho, Yong-Hoon, The 19th International Symposium on the Physics of Semiconductors and Applications (ISPSA), ISPSA, 2018-03-10

63
Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference

Kim, Joon Pyo; Kim, Seong Kwang; Park, Seohak; Kuk, Song-hyeon; Kim, Taeyoon; Kim, Bong Ho; Ahn, Seong-Hun; et al, NANO LETTERS, v.23, no.2, pp.451 - 461, 2023-01

64
Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

Hwang, JS; Gokarna, A; Cho, Yong-Hoon; Son, JK; Sakong, T; Paek, HS; Nam, OH; et al, APPLIED PHYSICS LETTERS, v.90, pp.178 - 182, 2007-03

65
Direct electron-beam writing with high aspect ratio for fabricating ion-beam lithography mask

Lee, BN; Cho, Yong-Hoon; Kim, YS; Hong, W; Woo, HJ, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S199 - S201, 2003-02

66
Direct Transfer of Light's Orbital Angular Momentum onto a Nonresonantly Excited Polariton Superfluid

Kwon, Min-Sik; Oh, Byoung Yong; Gong, Su-Hyun; Kim, Je-Hyung; Kang, Hang Kyu; Kang, Sooseok; Song, Jin Dong; et al, PHYSICAL REVIEW LETTERS, v.122, no.4, pp.045302, 2019-01

67
Dislocation-Eliminating Chemical Control Method for High-Efficiency GaN-Based Light Emitting Nanostructures

Kim, Je-Hyung; Oh, Chung-Seok; Ko, Young-Ho; Ko, Suk-Min; Park, Ki-Yon; Jeong, Myoungho; Lee, JeongYong; et al, CRYSTAL GROWTH DESIGN, v.12, no.3, pp.1292 - 1298, 2012-01

68
Dislocation-free and strain-relaxed GaN nanorods formed by a thermal gas treatment

Kim, Je-hyung; Oh, Chung-Seok; Ko, Young-ho; Ko, Suk-Min; Cho, Yong-Hoon, International workshop on nitride semiconductor (IWN2010), International workshop on nitride semiconductor (IWN2010), 2010-09-19

69
Doping inhomogeneity along single Mg-doped p-GaN rod studied by strong correlation among componential, electrical, and optical analyses

Choi, Minho; Cho, Yong-Hoon; Choi, Sunghan; Song, Hyun Gyu; Lee, Chulwon; Woo, Kie Young, The 19th International Symposium on the Physics of Semiconductors and Applications, The Korean Physical Society, 2018-07-02

70
Dynamic active wave plate using random nanoparticles

Park, Jung-Hoon; Park, Chung-Hyun; Yu, Hyunseung; Cho, Yong-Hoon; Park, YongKeun, OPTICS EXPRESS, v.20, no.15, pp.17010 - 17016, 2012-07

71
Dynamics of anomalous optical transitions in AlxGa1-xN alloys

Cho, Yong-Hoon; Gainer, GH; Lam, JB; Song, JJ; Yang, W; Jhe, W, PHYSICAL REVIEW B, v.61, no.11, pp.7203 - 7206, 2000-03

72
Dynamics of anomalous temperature-induced emission shift in MOCVD-grown (Al, In)GaN thin films

Cho, Yong-Hoon; Gainer, GH; Lam, J; Song, JJ; Yang, W; Jhe, W, Mat. Res. Soc. Symp. Proc, 2000

73
Dynamics of anomalous temperature-induced emission shift in MOCVD-grown (Al, In)GaN thin films

Cho, Yong-Hoon; Gainer, GH; Lam, JB; Song, JJ; Yang, W; Jhe, W, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.11 - 57, 2000

74
Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface

Cho, Yong-Hoon; Kim, DS; Choe, BD; Lim, H; Lee, JI; Kim, D, PHYSICAL REVIEW B, v.56, pp.R4375 - R4378, 1997

75
Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices

Song, JD; Park, YJ; Han, IK; Cho, WJ; Lee, JI; Cho, Yong-Hoon; Lee, JY, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.26, pp.86 - 90, 2005-02

76
Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structures

Sun, YP; Cho, Yong-Hoon; Kim, HM; Kang, TW; Kwon, SY; Yoon, E, JOURNAL OF APPLIED PHYSICS, v.100, pp.643 - 645, 2006-08

77
Effect of polaron-pair recombination on magnetoconductance in organic solar cells = 유기 태양전지에서 전하쌍 재결합 효과가 자기전도도에 미치는 영향link

Lee, Se-Jin; Cho, Yong-Hoon; 조용훈; Yoon, Choon-Sup; et al, 한국과학기술원, 2018

78
Effect of Si doping on the structural and the optical properties in high-quality AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Kwack, HS; Cho, Yong-Hoon; Bae, SB; Oh, DK; Lee, KS; Kim, CS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.1137 - 1141, 2005-05

79
Effect of surface plasmon polariton mode on spontaneous emission in gold coated GaN/InGaN quantum-well structures

Park, CH; Choi, JW; Cho, Yong-Hoon; Kim, SI; Son, JK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.905 - 909, 2007-03

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