DETERMINATION OF AL MOLE FRACTION FOR NULL CONDUCTION-BAND OFFSET IN IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION BY PHOTOLUMINESCENCE MEASUREMENT

Abstract

Photoluminescence properties of In0.5Ga0.5P/AlxGa1-xAs heterojunctions in both staggered and straddling band alignment regimes have been investigated. From the relation between the energies of below-band gap luminescence and Al compositions in the staggered band alignment regime, we determined the Al composition for null conduction band offset of the heterojunction as well as the conduction band offset value of In0.5Ga0.5P/GaAs heterojunction. Assuming the transitivity between the conduction band offset values, we also obtained the fraction of the band gap energy difference that is associated with the conduction band offset of an AlGaAs/GaAs heterojunction. (C) 1995 American Institute of Physics.