Controlling optical properties of Ge-on-Si by thermal annealing and etching process
We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.
- Issue Date
- 2015-08
- Language
- English
- Citation
11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.