Controlling optical properties of Ge-on-Si by thermal annealing and etching process
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Chulwon | ko |
| dc.contributor.author | Ki, Bugeun | ko |
| dc.contributor.author | Yoo, Yang-Seok | ko |
| dc.contributor.author | Jang, Minho | ko |
| dc.contributor.author | Oh, Jungwoo | ko |
| dc.contributor.author | Cho, Yong-Hoon | ko |
| dc.date.accessioned | 2023-11-21T12:01:24Z | - |
| dc.date.available | 2023-11-21T12:01:24Z | - |
| dc.date.created | 2023-11-21 | - |
| dc.date.issued | 2015-08 | - |
| dc.identifier.citation | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/315009 | - |
| dc.description.abstract | We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Controlling optical properties of Ge-on-Si by thermal annealing and etching process | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-84962799414 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Busan | - |
| dc.identifier.doi | 10.1109/CLEOPR.2015.7375929 | - |
| dc.contributor.localauthor | Cho, Yong-Hoon | - |
| dc.contributor.nonIdAuthor | Ki, Bugeun | - |
| dc.contributor.nonIdAuthor | Oh, Jungwoo | - |
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