Controlling optical properties of Ge-on-Si by thermal annealing and etching process

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dc.contributor.authorLee, Chulwonko
dc.contributor.authorKi, Bugeunko
dc.contributor.authorYoo, Yang-Seokko
dc.contributor.authorJang, Minhoko
dc.contributor.authorOh, Jungwooko
dc.contributor.authorCho, Yong-Hoonko
dc.date.accessioned2023-11-21T12:01:24Z-
dc.date.available2023-11-21T12:01:24Z-
dc.date.created2023-11-21-
dc.date.issued2015-08-
dc.identifier.citation11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.identifier.urihttp://hdl.handle.net/10203/315009-
dc.description.abstractWe studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleControlling optical properties of Ge-on-Si by thermal annealing and etching process-
dc.typeConference-
dc.identifier.scopusid2-s2.0-84962799414-
dc.type.rimsCONF-
dc.citation.publicationname11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationBusan-
dc.identifier.doi10.1109/CLEOPR.2015.7375929-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKi, Bugeun-
dc.contributor.nonIdAuthorOh, Jungwoo-
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PH-Conference Papers(학술회의논문)
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