An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique

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The energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution of the interface traps is investigated via an optical CP technique. The optical CP technique is useful to extract the energy distribution of interface traps, as well as the interface-trap density in nanoscale FB devices. The data extracted by the optical CP is verified in a comparison with the data extracted by subthreshold-slope techniques.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-11
Language
English
Article Type
Article
Keywords

DEPLETED SOI MOSFETS; ELECTRICAL-PROPERTIES; DENSITY; SILICON

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3667 - 3673

ISSN
0018-9383
URI
http://hdl.handle.net/10203/100848
Appears in Collection
EE-Journal Papers(저널논문)
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