An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique

Cited 6 time in webofscience Cited 0 time in scopus
  • Hit : 436
  • Download : 9
DC FieldValueLanguage
dc.contributor.authorKim, Sung-Hoko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorMoon, Dong-Ilko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-12T00:36:44Z-
dc.date.available2013-03-12T00:36:44Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-11-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3667 - 3673-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/100848-
dc.description.abstractThe energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution of the interface traps is investigated via an optical CP technique. The optical CP technique is useful to extract the energy distribution of interface traps, as well as the interface-trap density in nanoscale FB devices. The data extracted by the optical CP is verified in a comparison with the data extracted by subthreshold-slope techniques.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectDEPLETED SOI MOSFETS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectDENSITY-
dc.subjectSILICON-
dc.titleAn Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique-
dc.typeArticle-
dc.identifier.wosid000296099400002-
dc.identifier.scopusid2-s2.0-80054895073-
dc.type.rimsART-
dc.citation.volume58-
dc.citation.issue11-
dc.citation.beginningpage3667-
dc.citation.endingpage3673-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCharge pumping (CP)-
dc.subject.keywordAuthorfloating-body (FB)-
dc.subject.keywordAuthorinterface trap-
dc.subject.keywordAuthorsilicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET)-
dc.subject.keywordAuthortrap energy level-
dc.subject.keywordPlusDEPLETED SOI MOSFETS-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusDENSITY-
dc.subject.keywordPlusSILICON-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0