DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T00:36:44Z | - |
dc.date.available | 2013-03-12T00:36:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.11, pp.3667 - 3673 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100848 | - |
dc.description.abstract | The energy distribution of interface traps is extracted using an optically assisted charge pumping (optical CP) technique. Optically generated majority carriers through light illumination enable the CP process even in a floating-body (FB) device without an extra body contact. With the use of square pulses at different rising and falling times and the proposed analytical model, the energy distribution of the interface traps is investigated via an optical CP technique. The optical CP technique is useful to extract the energy distribution of interface traps, as well as the interface-trap density in nanoscale FB devices. The data extracted by the optical CP is verified in a comparison with the data extracted by subthreshold-slope techniques. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DEPLETED SOI MOSFETS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | DENSITY | - |
dc.subject | SILICON | - |
dc.title | An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique | - |
dc.type | Article | - |
dc.identifier.wosid | 000296099400002 | - |
dc.identifier.scopusid | 2-s2.0-80054895073 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3667 | - |
dc.citation.endingpage | 3673 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Charge pumping (CP) | - |
dc.subject.keywordAuthor | floating-body (FB) | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) | - |
dc.subject.keywordAuthor | trap energy level | - |
dc.subject.keywordPlus | DEPLETED SOI MOSFETS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | SILICON | - |
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