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Showing results 1 to 21 of 21

1	Anomalous threshold reduction from ⟨ 100 ⟩ uniaxial strain for a low-threshold Ge laser Sukhdeo, David S.; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra Raj; Nam, Donguk, OPTICS COMMUNICATIONS, v.379, pp.32 - 35, 2016-11
2	Characterization of femtosecond-laser-ablated a germanium single crystal in air by using X-ray diffraction Park, MI; Park, Chong-Ook; Kim, CS; Jeoung, SC, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, no.2, pp.531 - 535, 2005-02
3	Coverage dependence of glycine adsorption on the Ge(100)-2 x 1 surface Kachian, JS; Jung, S; Kim, Sehun; Bent, SF, SURFACE SCIENCE, v.605, no.7-8, pp.760 - 769, 2011-04
4	Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities Petykiewicz, Jan; Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Buckley, Sonia; Piggott, Alexander Y.; Vuckovic, Jelena; et al, NANO LETTERS, v.16, no.4, pp.2168 - 2173, 2016-04
5	H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09
6	Impact of minority carrier lifetime on the performance of strained germanium light sources Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, OPTICS COMMUNICATIONS, v.364, pp.233 - 237, 2016-04
7	Kerfless si and ge wafer technique for a thin single crystal solar cell = 단결정 박막 태양전지 형성을 위한 Si 및 Ge 박막 전이 기술 개발 link Park, Sang hyun; 박상현; et al, 한국과학기술원, 2015
8	Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04
9	p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices Choi, Won Chul; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.37 - 43, 2014-01
10	Research on improvement of electrical properties of Ge pMOS devices using Vacuum Annealing and Ultrathin Hf layer with sub-1nm EOT = 진공열처리와 Hf박막을 이용한 1nm이하 EOT를 가지는 Ge pMOS구조에서의 전기적 특성 개선에 관한 연구 link Chung, Won-Il; 정원일; et al, 한국과학기술원, 2014
11	Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03
12	Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.20, no.4, 2014-07
13	Temperature and Magnetic-Field Dependence of Radiative Decay in Colloidal Germanium Quantum Dots Robel, Istvan; Shabaev, Andrew; Lee, DohChang; Schaller, Richard D.; Pietryga, Jeffrey M.; Crooker, Scott A.; Efros, Alexander L.; et al, NANO LETTERS, v.15, no.4, pp.2685 - 2692, 2015-04
14	The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 33007, 2017-08
15	The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10
16	Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04
17	서로 다른 High-k 박막에 대해서 TMA 전처리에 따른 Ge/High-k 게이트 구조에서의 계면의 특성과 히스테리시스에 대한 연구 = Study on interface quality and hysteresis of Ge/High-k gate stack with TMA pretreatment for different High-k dielectrics link 이재진; Lee, Jae-Jin; et al, 한국과학기술원, 2012
18	저전력 소자 개발을 위한 대칭 게이트 배열의 저마늄 수직 방향 터널 전계 효과 트랜지스터 연구 = Study on germanium vertical band-to-band tunnel-field effect transistor with symmetric gate arrangement for low power device applications link 정우진; Jeong, Woo-Jin; et al, 한국과학기술원, 2014
19	졸-겔 Germanim oxide 유리 박막의 제조 및 광특성 = Fabrication and opical characteristics of the sol-gel derived germanium oxide glass thin films link 장재혁; Jang, Jae-Hyeok; et al, 한국과학기술원, 1998
20	졸-겔법으로 제조된 유기 수식체가 첨가된 Germanosilicate 유리에서의 높은 광민감성 = High photosensitivity of the Sol-Gel derived organically modified germanosilicate (ORMOGSIL) glasses link 장재혁; Jang, Jae-Hyeok; et al, 한국과학기술원, 2003
21	질화물 박막 증착 방법을 이용한 금속/게르마늄 접합의 쇼트키 장벽 높이 조절 = Schottky barrier height modulation of metal/germanium junction by using nitride thin films deposition link 이석원; Lee, Suk-Won; et al, 한국과학기술원, 2014

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