학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2014.2, [ vi, 41 p. ]
터널 전계 효과 트랜지스터; lightly-doped drain-source (LDD); electron-hole bilayer tunneling; steep subthreshold; Germanium; vertical tunneling; 저마늄; 수직 방향 터널 전계 효과 트랜지스터; band-to-band tunneling trnasistor TFETs); fin field effect transistor (FinFET)
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