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Showing results 1 to 5 of 5

1
Direct observation of Si lattice strain and its distribution in the Si(001)-SiO2 interface transition layer

Kim, YP; Choi, Si-Kyung; Kim, HK; Moon, DW, APPLIED PHYSICS LETTERS, v.71, no.24, pp.3504 - 3506, 1997-12

2
Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface

Kim, Geun-Myeong; Oh, Young Jun; Chang, Kee-Joo, JOURNAL OF APPLIED PHYSICS, v.114, no.22, pp.223705 - 223705, 2013-12

3
HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT

JOSHI, AB; Yoon, Giwan; KIM, JH; LO, GQ; KWONG, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.40, no.8, pp.1437 - 1445, 1993-08

4
HYDROGENATION EFFECT IN AN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

LEE, CH; Lee, Choochon; Chang, Kee-Joo; KIM, SC; JANG, J, APPLIED PHYSICS LETTERS, v.58, no.2, pp.134 - 136, 1991-01

5
Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface

Lee, Chang Hwi; Kim, Geun Myeong; Oh, Young Jun; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.14, no.11, pp.1557 - 1563, 2014-11

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