Direct observation of Si lattice strain and its distribution in the Si(001)-SiO2 interface transition layer

Abstract

In the transition layer of the Si(001)-SiO2 interface, Si lattice strain and its distribution were directly observed by medium energy ion scattering spectroscopy for thermal and ion beam oxides. The strain was in the vertical direction, and the maximum values at the SiO2 side of the transition layer were 0.96% and 2.8% for the thermal and ion beam oxides, respectively. (C) 1997 American Institute of Physics. [S0003-6951(97)00750-X].