HYDROGENATION EFFECT IN AN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

Abstract

The effects of hydrogen plasma exposure on the characteristics of an n-channel metal-oxide-semiconductor field-effect transistor are studied. The helium plasma give almost no changes in maximum transconductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and increases subthreshold swing. These results indicate that the excess interface traps are generated by hydrogenation, which is also confirmed by quasi-static capacitance-voltage analysis.