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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

HYDROGENATION EFFECT IN AN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

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dc.contributor.authorLEE, CHko
dc.contributor.authorLee, Choochonko
dc.contributor.authorChang, Kee-Jooko
dc.contributor.authorKIM, SCko
dc.contributor.authorJANG, Jko
dc.date.accessioned2013-02-27T04:57:01Z-
dc.date.available2013-02-27T04:57:01Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.58, no.2, pp.134 - 136-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/66557-
dc.description.abstractThe effects of hydrogen plasma exposure on the characteristics of an n-channel metal-oxide-semiconductor field-effect transistor are studied. The helium plasma give almost no changes in maximum transconductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and subthreshold slope whereas the hydrogen plasma degrades maximum transconductance and increases subthreshold swing. These results indicate that the excess interface traps are generated by hydrogenation, which is also confirmed by quasi-static capacitance-voltage analysis.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectCRYSTALLINE SILICON-
dc.subjectMOSFET DEGRADATION-
dc.subjectSI-SIO2 INTERFACE-
dc.subjectDIFFUSION-
dc.titleHYDROGENATION EFFECT IN AN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR-
dc.typeArticle-
dc.identifier.wosidA1991ER71800010-
dc.identifier.scopusid2-s2.0-36448999418-
dc.type.rimsART-
dc.citation.volume58-
dc.citation.issue2-
dc.citation.beginningpage134-
dc.citation.endingpage136-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.104951-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorLEE, CH-
dc.contributor.nonIdAuthorKIM, SC-
dc.contributor.nonIdAuthorJANG, J-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCRYSTALLINE SILICON-
dc.subject.keywordPlusMOSFET DEGRADATION-
dc.subject.keywordPlusSI-SIO2 INTERFACE-
dc.subject.keywordPlusDIFFUSION-
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