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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Direct bandgap germanium-on-silicon inferred from 5.7% ⟨100⟩ uniaxial tensile strain [Invited] Sukhdeo, David S.; Nam, Donguk; Kang, Ju-Hyung; Brongersma Mark L.; Saraswat Krishna C., PHOTONICS RESEARCH, v.2, no.3, pp.A8 - A13, 2014-06 | |
| Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon Nam, Ju Hyung; Alkis, Sabri; Nam, Donguk; Afshinmanesh, Farzaneh; Shim, Jaewoo; Park, Jin-Hong; Brongersma, Mark; Okyay, Ali Kemal; Kamins, Theodore I.; Saraswat, Krishna, JOURNAL OF CRYSTAL GROWTH, v.416, pp.21 - 27, 2015-04 | |
| Impact of minority carrier lifetime on the performance of strained germanium light sources Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, OPTICS COMMUNICATIONS, v.364, pp.233 - 237, 2016-04 | |
| Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics Sukhdeo, David S.; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS EXPRESS, v.23, no.13, pp.16740 - 16749, 2015-06 | |
| Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities Petykiewicz, Jan; Nam, Donguk; Sukhdeo, David S.; Gupta, Shashank; Buckley, Sonia; Piggott, Alexander Y.; Vuckovic, Jelena; Saraswat, Krishna C., NANO LETTERS, v.16, no.4, pp.2168 - 2173, 2016-04 | |
| Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I.; Brongersma, Mark L.; Saraswat, Krishna C., OPTICS EXPRESS, v.23, no.12, pp.15816 - 15823, 2015-06 | |
| Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser Nam, Donguk; Sukhdeo, David; Cheng, Szu-Lin; Roy, Arunanshu; Huang, Kevin Chih-Yao; Brongersma, Mark; Nishi, Yoshio; Saraswat, Krishna, APPLIED PHYSICS LETTERS, v.100, no.13, 2012-03 | |
| Ultimate limits of biaxial tensile strain and n-type doping for realizing an efficient low-threshold Ge laser Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra (Raj); Nam, Donguk, JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.2, 2016-02 | |
| Anomalous threshold reduction from ⟨ 100 ⟩ uniaxial strain for a low-threshold Ge laser Sukhdeo, David S.; Kim, Yeji; Gupta, Shashank; Saraswat, Krishna C.; Dutt, Birendra Raj; Nam, Donguk, OPTICS COMMUNICATIONS, v.379, pp.32 - 35, 2016-11 | |
| Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application Jung, Woo-Shik; Park, Jin-Hong; Nainani, Aneesh; Nam, Donguk; Saraswat, Krishna C., APPLIED PHYSICS LETTERS, v.101, no.7, 2012-08 |
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