A transmission electron microscopy study on the atomic arrangement and grain growth of hexagonal structured Ge2Sb2Te5
The atomic arrangement and grain growth of the hexagonal structured Ge2Sb2Te5 were investigated by a transmission electron microscopy study. Unlike the isotropic crystallization of face-centered-cubic (fcc) structured Ge2Sb2Te5, the hexagonal structured Ge2Sb2Te5 grain was preferably grown to a large degree with a specific direction. As a result, we have revealed that the grain growth occurred parallel to the (0001) plane, and identified the atomic arrangement of the hexagonal structured Ge2Sb2Te5 having nine cyclic layers by analyzing the high-resolution transmission electron microscopy images and simulated images obtained in the direction of < 1120 > zone axis. (c) 2006 Elsevier B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 2006-11
- Language
- English
- Article Type
- Article
- Keywords
THIN-FILMS; RESISTANCE MEASUREMENTS; METASTABLE GE2SB2TE5; PHASE-TRANSITIONS; CRYSTALLIZATION; DIFFRACTION; MEMORY
- Citation
APPLIED SURFACE SCIENCE, v.253, pp.714 - 719
- ISSN
- 0169-4332
- Appears in Collection
- MS-Journal Papers(저널논문)
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