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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

A transmission electron microscopy study on the atomic arrangement and grain growth of hexagonal structured Ge2Sb2Te5

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dc.contributor.authorLee, JeongYongko
dc.contributor.authorKim, YTko
dc.contributor.authorPark, YJko
dc.date.accessioned2013-03-08T11:34:54Z-
dc.date.available2013-03-08T11:34:54Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-11-
dc.identifier.citationAPPLIED SURFACE SCIENCE, v.253, pp.714 - 719-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10203/92918-
dc.description.abstractThe atomic arrangement and grain growth of the hexagonal structured Ge2Sb2Te5 were investigated by a transmission electron microscopy study. Unlike the isotropic crystallization of face-centered-cubic (fcc) structured Ge2Sb2Te5, the hexagonal structured Ge2Sb2Te5 grain was preferably grown to a large degree with a specific direction. As a result, we have revealed that the grain growth occurred parallel to the (0001) plane, and identified the atomic arrangement of the hexagonal structured Ge2Sb2Te5 having nine cyclic layers by analyzing the high-resolution transmission electron microscopy images and simulated images obtained in the direction of < 1120 > zone axis. (c) 2006 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTHIN-FILMS-
dc.subjectRESISTANCE MEASUREMENTS-
dc.subjectMETASTABLE GE2SB2TE5-
dc.subjectPHASE-TRANSITIONS-
dc.subjectCRYSTALLIZATION-
dc.subjectDIFFRACTION-
dc.subjectMEMORY-
dc.titleA transmission electron microscopy study on the atomic arrangement and grain growth of hexagonal structured Ge2Sb2Te5-
dc.typeArticle-
dc.identifier.wosid000242647800051-
dc.identifier.scopusid2-s2.0-33845399366-
dc.type.rimsART-
dc.citation.volume253-
dc.citation.beginningpage714-
dc.citation.endingpage719-
dc.citation.publicationnameAPPLIED SURFACE SCIENCE-
dc.identifier.doi10.1016/j.apsusc.2005.12.158-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, YT-
dc.contributor.nonIdAuthorPark, YJ-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGe2Sb2Te5-
dc.subject.keywordAuthortransmission electron microscopy-
dc.subject.keywordAuthoratomic arrangement-
dc.subject.keywordAuthorgrain growth-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusRESISTANCE MEASUREMENTS-
dc.subject.keywordPlusMETASTABLE GE2SB2TE5-
dc.subject.keywordPlusPHASE-TRANSITIONS-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusDIFFRACTION-
dc.subject.keywordPlusMEMORY-
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