Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

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The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers. (C) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-05
Language
English
Article Type
Article
Keywords

ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; SPIN; TRANSPORT; TRANSISTOR; MICROSCOPY; DEPENDENCE; INJECTION

Citation

APPLIED PHYSICS LETTERS, v.90, no.19

ISSN
0003-6951
DOI
10.1063/1.2737128
URI
http://hdl.handle.net/10203/91931
Appears in Collection
MS-Journal Papers(저널논문)
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