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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Probing momentum distributions in magnetic tunnel junctions via hot-electron decay

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dc.contributor.authorJansen, Rko
dc.contributor.authorBanerjee, Tko
dc.contributor.authorPark, Byong Gukko
dc.contributor.authorLodder, JCko
dc.date.accessioned2013-03-08T03:03:23Z-
dc.date.available2013-03-08T03:03:23Z-
dc.date.created2012-03-19-
dc.date.created2012-03-19-
dc.date.issued2007-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.90, no.19-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/91931-
dc.description.abstractThe tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers. (C) 2007 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectROOM-TEMPERATURE-
dc.subjectLARGE MAGNETORESISTANCE-
dc.subjectSPIN-
dc.subjectTRANSPORT-
dc.subjectTRANSISTOR-
dc.subjectMICROSCOPY-
dc.subjectDEPENDENCE-
dc.subjectINJECTION-
dc.titleProbing momentum distributions in magnetic tunnel junctions via hot-electron decay-
dc.typeArticle-
dc.identifier.wosid000246413400050-
dc.identifier.scopusid2-s2.0-34248386879-
dc.type.rimsART-
dc.citation.volume90-
dc.citation.issue19-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2737128-
dc.contributor.localauthorPark, Byong Guk-
dc.contributor.nonIdAuthorJansen, R-
dc.contributor.nonIdAuthorBanerjee, T-
dc.contributor.nonIdAuthorLodder, JC-
dc.type.journalArticleArticle-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusLARGE MAGNETORESISTANCE-
dc.subject.keywordPlusSPIN-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusTRANSISTOR-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusINJECTION-
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