Atomic arrangements of (Ga(1-x)Mn(x))N nanorods grown on Al(2)O(3) substrates

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X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga(1-x)Mn(x))N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga(1-x)Mn(x))N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga(1-x)Mn(x))N nanorods grown on the Al(2)O(3) (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results. (C) 2008 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2008-04
Language
English
Article Type
Article
Keywords

MOLECULAR-BEAM EPITAXY; SEMICONDUCTOR HETEROSTRUCTURES; ROOM-TEMPERATURE; GAMNN FILMS; FERROMAGNETISM; NANOWIRES; (GA,MN)AS; BEHAVIOR; GAN

Citation

APPLIED PHYSICS LETTERS, v.92, no.14

ISSN
0003-6951
DOI
10.1063/1.2902321
URI
http://hdl.handle.net/10203/91571
Appears in Collection
MS-Journal Papers(저널논문)
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