Synthesis and electrical properties of single crystalline CrSi2 nanowires

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Free-standing CrSi2 nanowires are synthesized by a vapor transport based method for the first time. High-quality CrSi2 nanowires with a hexagonal cross section are produced by the reaction of a CrCl2 precursor and a Si substrate without using any metal catalyst. We have studied the crystal structure and electrical transport properties of CrSi2 nanowires. Transmission electron microscopy and X-ray diffraction studies confirm the single-crystalline nature of the CrSi2 nanowires of a C40 type structure. Four-probe devices were fabricated by the focused ion beam equipped with a nanomanipulator. Measured resistivity of the nanowire is 0.012 Omega center dot cm, which is close to that of bulk single-crystalline CrSi2.
Publisher
AMER CHEMICAL SOC
Issue Date
2007-07
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; GAN NANOWIRES; COSI NANOWIRES; GROWTH; ARRAYS; OXIDES; METAL; NANOSTRUCTURES; DISILICIDE; SILICIDES

Citation

JOURNAL OF PHYSICAL CHEMISTRY C, v.111, no.26, pp.9072 - 9076

ISSN
1932-7447
DOI
10.1021/jp071707b
URI
http://hdl.handle.net/10203/90094
Appears in Collection
CH-Journal Papers(저널논문)
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