DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Kwan-Yong | ko |
dc.contributor.author | Varadwaj, Kumar S. K. | ko |
dc.contributor.author | Cha, Dong-Kyu | ko |
dc.contributor.author | In, June-Ho | ko |
dc.contributor.author | Kim, Ji-Young | ko |
dc.contributor.author | Park, Jeung-Hee | ko |
dc.contributor.author | Kim, Bong-Soo | ko |
dc.date.accessioned | 2013-03-07T11:40:17Z | - |
dc.date.available | 2013-03-07T11:40:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-07 | - |
dc.identifier.citation | JOURNAL OF PHYSICAL CHEMISTRY C, v.111, no.26, pp.9072 - 9076 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10203/90094 | - |
dc.description.abstract | Free-standing CrSi2 nanowires are synthesized by a vapor transport based method for the first time. High-quality CrSi2 nanowires with a hexagonal cross section are produced by the reaction of a CrCl2 precursor and a Si substrate without using any metal catalyst. We have studied the crystal structure and electrical transport properties of CrSi2 nanowires. Transmission electron microscopy and X-ray diffraction studies confirm the single-crystalline nature of the CrSi2 nanowires of a C40 type structure. Four-probe devices were fabricated by the focused ion beam equipped with a nanomanipulator. Measured resistivity of the nanowire is 0.012 Omega center dot cm, which is close to that of bulk single-crystalline CrSi2. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | GAN NANOWIRES | - |
dc.subject | COSI NANOWIRES | - |
dc.subject | GROWTH | - |
dc.subject | ARRAYS | - |
dc.subject | OXIDES | - |
dc.subject | METAL | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | DISILICIDE | - |
dc.subject | SILICIDES | - |
dc.title | Synthesis and electrical properties of single crystalline CrSi2 nanowires | - |
dc.type | Article | - |
dc.identifier.wosid | 000247599300013 | - |
dc.identifier.scopusid | 2-s2.0-34547438767 | - |
dc.type.rims | ART | - |
dc.citation.volume | 111 | - |
dc.citation.issue | 26 | - |
dc.citation.beginningpage | 9072 | - |
dc.citation.endingpage | 9076 | - |
dc.citation.publicationname | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.identifier.doi | 10.1021/jp071707b | - |
dc.contributor.localauthor | Kim, Bong-Soo | - |
dc.contributor.nonIdAuthor | Seo, Kwan-Yong | - |
dc.contributor.nonIdAuthor | Varadwaj, Kumar S. K. | - |
dc.contributor.nonIdAuthor | Cha, Dong-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Ji-Young | - |
dc.contributor.nonIdAuthor | Park, Jeung-Hee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | GAN NANOWIRES | - |
dc.subject.keywordPlus | COSI NANOWIRES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | DISILICIDE | - |
dc.subject.keywordPlus | SILICIDES | - |
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