Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells
The InP/InGaAsP double heterejunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Issue Date
- 2005-04
- Language
- English
- Article Type
- Article
- Citation
ELECTRONICS LETTERS, v.41, no.9, pp.557 - 559
- ISSN
- 0013-5194
- Appears in Collection
- EE-Journal Papers(저널논문)
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