Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells

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dc.contributor.authorKim, CYko
dc.contributor.authorCha, JHko
dc.contributor.authorKim, Jko
dc.contributor.authorKwon, Young Seko
dc.date.accessioned2013-03-07T10:58:27Z-
dc.date.available2013-03-07T10:58:27Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-04-
dc.identifier.citationELECTRONICS LETTERS, v.41, no.9, pp.557 - 559-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/90008-
dc.description.abstractThe InP/InGaAsP double heterejunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleImprovement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells-
dc.typeArticle-
dc.identifier.wosid000228925400031-
dc.identifier.scopusid2-s2.0-18744416963-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue9-
dc.citation.beginningpage557-
dc.citation.endingpage559-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:20050005-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorKim, CY-
dc.contributor.nonIdAuthorCha, JH-
dc.contributor.nonIdAuthorKim, J-
dc.type.journalArticleArticle-
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