Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, CY | ko |
| dc.contributor.author | Cha, JH | ko |
| dc.contributor.author | Kim, J | ko |
| dc.contributor.author | Kwon, Young Se | ko |
| dc.date.accessioned | 2013-03-07T10:58:27Z | - |
| dc.date.available | 2013-03-07T10:58:27Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-04 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.41, no.9, pp.557 - 559 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/90008 | - |
| dc.description.abstract | The InP/InGaAsP double heterejunction (DH) solar cell to increase the short-circuit current is investigated. The InP/InGaAsP DH solar cell has been newly designed having a 1.12 eV InGaAsP absorption layer. Increases of 100% in short-circuit current and 50.18% in efficiency for the DH device are observed over the control sample. | - |
| dc.language | English | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | Improvement of short-circuit current of InP/InGaAsP/InP double heterojunction solar cells | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000228925400031 | - |
| dc.identifier.scopusid | 2-s2.0-18744416963 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 41 | - |
| dc.citation.issue | 9 | - |
| dc.citation.beginningpage | 557 | - |
| dc.citation.endingpage | 559 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el:20050005 | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
| dc.contributor.nonIdAuthor | Kim, CY | - |
| dc.contributor.nonIdAuthor | Cha, JH | - |
| dc.contributor.nonIdAuthor | Kim, J | - |
| dc.type.journalArticle | Article | - |
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