Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates
The correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates was investigated by using high-resolution transmission electron microscopy (HRTEM) measurements. The HRTEM images showed three symmetric grain boundaries and one asymmetric grain boundary around the triple junction in the ZnO film. The correlation between the atomic structures and the misorientation angles of the grain boundaries at triple junctions in ZnO films is described on the basis of the HRTEM results. (c) 2006 American Institute of Physics.
- Publisher
- AMER INST PHYSICS
- Issue Date
- 2006-09
- Language
- English
- Article Type
- Article
- Keywords
ELECTRONIC-STRUCTURE; ROOM-TEMPERATURE; SAPPHIRE; EMISSION; GAN
- Citation
APPLIED PHYSICS LETTERS, v.89, no.10
- ISSN
- 0003-6951
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- 000240384000035.pdf(551.67 kB)Download
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