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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates

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dc.contributor.authorShin, J. W.ko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorNo, Y. S.ko
dc.contributor.authorKim, T. W.ko
dc.contributor.authorChoi, W. K.ko
dc.date.accessioned2013-03-06T14:44:05Z-
dc.date.available2013-03-06T14:44:05Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-09-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.89, no.10-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/87294-
dc.description.abstractThe correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates was investigated by using high-resolution transmission electron microscopy (HRTEM) measurements. The HRTEM images showed three symmetric grain boundaries and one asymmetric grain boundary around the triple junction in the ZnO film. The correlation between the atomic structures and the misorientation angles of the grain boundaries at triple junctions in ZnO films is described on the basis of the HRTEM results. (c) 2006 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectROOM-TEMPERATURE-
dc.subjectSAPPHIRE-
dc.subjectEMISSION-
dc.subjectGAN-
dc.titleCorrelation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates-
dc.typeArticle-
dc.identifier.wosid000240384000035-
dc.identifier.scopusid2-s2.0-33748500249-
dc.type.rimsART-
dc.citation.volume89-
dc.citation.issue10-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2338792-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorShin, J. W.-
dc.contributor.nonIdAuthorNo, Y. S.-
dc.contributor.nonIdAuthorKim, T. W.-
dc.contributor.nonIdAuthorChoi, W. K.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusGAN-
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