Comparison of plasma generation behaviors between a single crystal semiconductor bridge (single-SCB) and a polysilicon semiconductor bridge (poly-SCB)

Abstract

A single crystal semiconductor bridge (single-SCB) has been fabricated by a micro-electro-mechanical system (MEMS) technique based on anisotropic wet etching, where an air gap replaces the oxide layer NOD used as a thermal insulating barrier in the conventional polycrystalline semiconductor bridge (poly-SCB). Upon flowing current in the single-SCB and the poly-SCB, the single-SCB exhibits a second peak of plasma generation at 500 ns, whereas that of the poly-SCB is founded at 600 ns. The results of an electrical experiment are analyzed through a finite element analysis and a simple discrete-element modeling of the thermal structure. From these investigations, it is clear that more effective heat conduction related to the plasma discharge behaviors is achieved in the single-SCB with a simpler thermal structure. (C) 2004 Elsevier B.V. All rights reserved.