DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, MI | ko |
dc.contributor.author | Choo, HT | ko |
dc.contributor.author | Yoon, SH | ko |
dc.contributor.author | Park, Chong-Ook | ko |
dc.date.accessioned | 2013-03-06T04:52:22Z | - |
dc.date.available | 2013-03-06T04:52:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.citation | SENSORS AND ACTUATORS A-PHYSICAL, v.115, no.1, pp.104 - 108 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85857 | - |
dc.description.abstract | A single crystal semiconductor bridge (single-SCB) has been fabricated by a micro-electro-mechanical system (MEMS) technique based on anisotropic wet etching, where an air gap replaces the oxide layer NOD used as a thermal insulating barrier in the conventional polycrystalline semiconductor bridge (poly-SCB). Upon flowing current in the single-SCB and the poly-SCB, the single-SCB exhibits a second peak of plasma generation at 500 ns, whereas that of the poly-SCB is founded at 600 ns. The results of an electrical experiment are analyzed through a finite element analysis and a simple discrete-element modeling of the thermal structure. From these investigations, it is clear that more effective heat conduction related to the plasma discharge behaviors is achieved in the single-SCB with a simpler thermal structure. (C) 2004 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Comparison of plasma generation behaviors between a single crystal semiconductor bridge (single-SCB) and a polysilicon semiconductor bridge (poly-SCB) | - |
dc.type | Article | - |
dc.identifier.wosid | 000223611000016 | - |
dc.identifier.scopusid | 2-s2.0-4243131459 | - |
dc.type.rims | ART | - |
dc.citation.volume | 115 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 104 | - |
dc.citation.endingpage | 108 | - |
dc.citation.publicationname | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.identifier.doi | 10.1016/j.sna.2004.04.038 | - |
dc.contributor.localauthor | Park, Chong-Ook | - |
dc.contributor.nonIdAuthor | Park, MI | - |
dc.contributor.nonIdAuthor | Choo, HT | - |
dc.contributor.nonIdAuthor | Yoon, SH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | semiconductor bridge | - |
dc.subject.keywordAuthor | igniter | - |
dc.subject.keywordAuthor | silicon wet etching | - |
dc.subject.keywordAuthor | thermal structure | - |
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