Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

Abstract

Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700-850 degreesC is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget. (C) 2002 American Institute of Physics.