Spectroscopic ellipsometry studies on polycrystalline Cd0.9Zn0.1Te thin films

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The pseudodielectric-function spectra, epsilon(E) = epsilon(1)(E) + iepsilon(2)(E), of polycrystalline Cd0.9Zn0.1Te thin films in the 1.7-5.5 eV photon energy range were measured by spectroscopic ellipsometry. ne measured dielectric function spectra reveal distinct structures at energies of the E-1, E-1 + Delta(1) and E-2 critical points due to interband transitions. The vacuum evaporated Cd0.9Zn0.1Te thin films exhibited zinc-blende structure with predominant (111) orientation. The rms roughness of the film evaluated by an ex-situ atomic force microscopy is 3.7 nm. Dielectric related optical constants, determined from the spectroscopic ellipsometry data are presented and analyzed. The optical constants of the film were also determined by using optical transmittance measurements, and results were discussed.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2004-03
Language
English
Article Type
Article
Keywords

INTERBAND CRITICAL-POINTS; OPTICAL-CONSTANTS; DIELECTRIC FUNCTION; TEMPERATURE-DEPENDENCE; TERNARY ALLOYS; CD1-XZNXTE; CADMIUM; REFLECTIVITY; PARAMETERS; SILICON

Citation

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, pp.782 - 790

ISSN
0031-8965
DOI
10.1002/pssa.200306714
URI
http://hdl.handle.net/10203/85382
Appears in Collection
EE-Journal Papers(저널논문)
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