Spectroscopic ellipsometry studies on polycrystalline Cd0.9Zn0.1Te thin films

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dc.contributor.authorSridharan, MGko
dc.contributor.authorMekaladevi, Mko
dc.contributor.authorRodriguez-Viejo, Jko
dc.contributor.authorNarayandass, SKko
dc.contributor.authorMangalaraj, Dko
dc.contributor.authorLee, Hee Chulko
dc.date.accessioned2013-03-05T04:06:27Z-
dc.date.available2013-03-05T04:06:27Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-03-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, pp.782 - 790-
dc.identifier.issn0031-8965-
dc.identifier.urihttp://hdl.handle.net/10203/85382-
dc.description.abstractThe pseudodielectric-function spectra, epsilon(E) = epsilon(1)(E) + iepsilon(2)(E), of polycrystalline Cd0.9Zn0.1Te thin films in the 1.7-5.5 eV photon energy range were measured by spectroscopic ellipsometry. ne measured dielectric function spectra reveal distinct structures at energies of the E-1, E-1 + Delta(1) and E-2 critical points due to interband transitions. The vacuum evaporated Cd0.9Zn0.1Te thin films exhibited zinc-blende structure with predominant (111) orientation. The rms roughness of the film evaluated by an ex-situ atomic force microscopy is 3.7 nm. Dielectric related optical constants, determined from the spectroscopic ellipsometry data are presented and analyzed. The optical constants of the film were also determined by using optical transmittance measurements, and results were discussed.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectINTERBAND CRITICAL-POINTS-
dc.subjectOPTICAL-CONSTANTS-
dc.subjectDIELECTRIC FUNCTION-
dc.subjectTEMPERATURE-DEPENDENCE-
dc.subjectTERNARY ALLOYS-
dc.subjectCD1-XZNXTE-
dc.subjectCADMIUM-
dc.subjectREFLECTIVITY-
dc.subjectPARAMETERS-
dc.subjectSILICON-
dc.titleSpectroscopic ellipsometry studies on polycrystalline Cd0.9Zn0.1Te thin films-
dc.typeArticle-
dc.identifier.wosid000220616600028-
dc.identifier.scopusid2-s2.0-1942538611-
dc.type.rimsART-
dc.citation.volume201-
dc.citation.beginningpage782-
dc.citation.endingpage790-
dc.citation.publicationnamePHYSICA STATUS SOLIDI A-APPLIED RESEARCH-
dc.identifier.doi10.1002/pssa.200306714-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorSridharan, MG-
dc.contributor.nonIdAuthorMekaladevi, M-
dc.contributor.nonIdAuthorRodriguez-Viejo, J-
dc.contributor.nonIdAuthorNarayandass, SK-
dc.contributor.nonIdAuthorMangalaraj, D-
dc.type.journalArticleArticle-
dc.subject.keywordPlusINTERBAND CRITICAL-POINTS-
dc.subject.keywordPlusOPTICAL-CONSTANTS-
dc.subject.keywordPlusDIELECTRIC FUNCTION-
dc.subject.keywordPlusTEMPERATURE-DEPENDENCE-
dc.subject.keywordPlusTERNARY ALLOYS-
dc.subject.keywordPlusCD1-XZNXTE-
dc.subject.keywordPlusCADMIUM-
dc.subject.keywordPlusREFLECTIVITY-
dc.subject.keywordPlusPARAMETERS-
dc.subject.keywordPlusSILICON-
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