CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

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Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrate (1 similar to 30 Omega.cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrate. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2002-10
Language
English
Article Type
Article
Keywords

TECHNOLOGY; SI

Citation

IEEE ELECTRON DEVICE LETTERS, v.23, no.10, pp.591 - 593

ISSN
0741-3106
URI
http://hdl.handle.net/10203/84137
Appears in Collection
EE-Journal Papers(저널논문)RIMS Journal Papers
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