Enhancement of the stability of capacitance-voltage characteristics of Hg1-xZnxTe-based metal-insulator-semiconductor capacitors by voltage annealing
By electrochemical deposition, an anodic oxide film composed of a compound containing HgTeO3, ZnTeO3, and TeO2-rich components was formed on a Hg1-xZnxTe material surface. After the anodic oxide film deposition, a voltage annealing process in which the electrical potential is maintained constant was applied. This process improves the quality of the anodic oxide film. The capacitance-voltage (C-V) measurement of the metal-insulator-semiconductor (MIS) capacitor of Ni/In/ZnS/oxide/Hg1-xZnxTe confirms the enhancement of the stability of MIS capacitor characteristics by the voltage annealing process.
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Issue Date
- 2004-10
- Language
- English
- Article Type
- Article
- Keywords
CRYSTAL
- Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.10A, pp.L1244 - L1246
- ISSN
- 0021-4922
- Appears in Collection
- RIMS Journal Papers
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- There are no files associated with this item.
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