Enhancement of the stability of capacitance-voltage characteristics of Hg1-xZnxTe-based metal-insulator-semiconductor capacitors by voltage annealing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Y.H | ko |
| dc.contributor.author | Kim, S.H | ko |
| dc.date.accessioned | 2013-03-03T20:21:15Z | - |
| dc.date.available | 2013-03-03T20:21:15Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004-10 | - |
| dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.43, no.10A, pp.L1244 - L1246 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/80277 | - |
| dc.description.abstract | By electrochemical deposition, an anodic oxide film composed of a compound containing HgTeO3, ZnTeO3, and TeO2-rich components was formed on a Hg1-xZnxTe material surface. After the anodic oxide film deposition, a voltage annealing process in which the electrical potential is maintained constant was applied. This process improves the quality of the anodic oxide film. The capacitance-voltage (C-V) measurement of the metal-insulator-semiconductor (MIS) capacitor of Ni/In/ZnS/oxide/Hg1-xZnxTe confirms the enhancement of the stability of MIS capacitor characteristics by the voltage annealing process. | - |
| dc.language | English | - |
| dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
| dc.subject | CRYSTAL | - |
| dc.title | Enhancement of the stability of capacitance-voltage characteristics of Hg1-xZnxTe-based metal-insulator-semiconductor capacitors by voltage annealing | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000224737000003 | - |
| dc.identifier.scopusid | 2-s2.0-10444251001 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 43 | - |
| dc.citation.issue | 10A | - |
| dc.citation.beginningpage | L1244 | - |
| dc.citation.endingpage | L1246 | - |
| dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | - |
| dc.identifier.doi | 10.1143/JJAP.43.L1244 | - |
| dc.contributor.localauthor | Kim, Y.H | - |
| dc.contributor.nonIdAuthor | Kim, S.H | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | voltage annealing | - |
| dc.subject.keywordAuthor | Hg1-xZnxTe | - |
| dc.subject.keywordAuthor | metal-insulator-semiconductor | - |
| dc.subject.keywordAuthor | anodic oxide film | - |
| dc.subject.keywordAuthor | capacitance-voltage | - |
| dc.subject.keywordPlus | CRYSTAL | - |
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