Nano-scale island (dot)-induced optical emission in InGaN quantum wells

Abstract

Thin InGaN layers were grown using metalorganic chemical vapor deposition and were characterized using atomic force microscopy and high-resolution transmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov growth mode, including a 2D wetting layer and 3D self-assembled quantum dots. We also observed that the InGaN nano-scale dots had a truncated cone shape with {1-102} facets with respect to the (0002) surface. A visible spectral range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.