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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Nano-scale island (dot)-induced optical emission in InGaN quantum wells

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dc.contributor.authorKim, KSko
dc.contributor.authorLee, WHko
dc.contributor.authorKim, CSko
dc.contributor.authorYang, GMko
dc.contributor.authorHong, CHko
dc.contributor.authorSuh, EKko
dc.contributor.authorLim, KYko
dc.contributor.authorLee, HJko
dc.contributor.authorCho, HKko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorYang, Mko
dc.contributor.authorLee, YHko
dc.contributor.authorSeo, JMko
dc.date.accessioned2013-03-03T10:04:32Z-
dc.date.available2013-03-03T10:04:32Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-07-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.141 - 146-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/78311-
dc.description.abstractThin InGaN layers were grown using metalorganic chemical vapor deposition and were characterized using atomic force microscopy and high-resolution transmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov growth mode, including a 2D wetting layer and 3D self-assembled quantum dots. We also observed that the InGaN nano-scale dots had a truncated cone shape with {1-102} facets with respect to the (0002) surface. A visible spectral range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectGROWTH-
dc.subjectDOTS-
dc.subjectGAN-
dc.subjectTEMPERATURE-
dc.subjectTRANSITION-
dc.subjectSUBSTRATE-
dc.subjectSHAPES-
dc.subjectALN-
dc.subjectGE-
dc.titleNano-scale island (dot)-induced optical emission in InGaN quantum wells-
dc.typeArticle-
dc.identifier.wosid000169870600031-
dc.identifier.scopusid2-s2.0-0035619451-
dc.type.rimsART-
dc.citation.volume39-
dc.citation.issue1-
dc.citation.beginningpage141-
dc.citation.endingpage146-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, KS-
dc.contributor.nonIdAuthorLee, WH-
dc.contributor.nonIdAuthorKim, CS-
dc.contributor.nonIdAuthorYang, GM-
dc.contributor.nonIdAuthorHong, CH-
dc.contributor.nonIdAuthorSuh, EK-
dc.contributor.nonIdAuthorLim, KY-
dc.contributor.nonIdAuthorLee, HJ-
dc.contributor.nonIdAuthorCho, HK-
dc.contributor.nonIdAuthorYang, M-
dc.contributor.nonIdAuthorLee, YH-
dc.contributor.nonIdAuthorSeo, JM-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusDOTS-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusSHAPES-
dc.subject.keywordPlusALN-
dc.subject.keywordPlusGE-
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