RBS Measurements of GexSi1-x/Si(100) Crystals Grown by Solid Phase Epitaxy by Using an a-Ge/Au/Si(100) Structure
- Publisher
- 한국물리학회
- Issue Date
- 1997-12
- Language
- Korean
- Citation
응용물리, v.10, no.3, pp.252 - 257
- ISSN
- 1013-7009
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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