RBS Measurements of GexSi1-x/Si(100) Crystals Grown by Solid Phase Epitaxy by Using an a-Ge/Au/Si(100) Structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H.S. Kim | ko |
| dc.contributor.author | J.J. Lee | ko |
| dc.contributor.author | K.H. Kim | ko |
| dc.contributor.author | T.G. Im | ko |
| dc.contributor.author | C.K. Choi | ko |
| dc.contributor.author | J.Y. Lee | ko |
| dc.date.accessioned | 2013-03-02T15:50:46Z | - |
| dc.date.available | 2013-03-02T15:50:46Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997-12 | - |
| dc.identifier.citation | 응용물리, v.10, no.3, pp.252 - 257 | - |
| dc.identifier.issn | 1013-7009 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/74269 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | RBS Measurements of GexSi1-x/Si(100) Crystals Grown by Solid Phase Epitaxy by Using an a-Ge/Au/Si(100) Structure | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 10 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 252 | - |
| dc.citation.endingpage | 257 | - |
| dc.citation.publicationname | 응용물리 | - |
| dc.contributor.localauthor | J.Y. Lee | - |
| dc.contributor.nonIdAuthor | H.S. Kim | - |
| dc.contributor.nonIdAuthor | J.J. Lee | - |
| dc.contributor.nonIdAuthor | K.H. Kim | - |
| dc.contributor.nonIdAuthor | T.G. Im | - |
| dc.contributor.nonIdAuthor | C.K. Choi | - |
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