High Performance EEPROMs Using N- and P-Channel Polysilicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Oxide

Abstract

High-performance EEPROM's using n- and p-channel polysilicon thin-film transistors (poly-Si TFT's) with electron cyclotron resonance (ECR) NaO-plasma oxide have been demonstrated. Both programming and erasing were accomplished by Fowler-Nordheim (F-N) tunneling within 1 ms regardless of programming and erasing voltages. The poly-Si TFT EEPROM's have a threshold voltage shift of 4 V between programmed and erased states; furthermore, maintain a large threshold voltage shift of 2.5 V after 1 x 10(5) program and erase cycles. This is attributed to the excellent charge-to-breakdown (Qbd) up to 10 C/cm(2) of ECR N2O-plasma oxide.